Interconnect structure having enhanced electromigration reliabilty and a method of fabricating same

ABSTRACT

An interconnect structure having improved electromigration (EM) reliability is provided. The inventive interconnect structure avoids a circuit dead opening that is caused by EM failure by incorporating a EM preventing liner at least partially within a metal interconnect. In one embodiment, a “U-shaped” EM preventing liner is provided that abuts a diffusion barrier that separates conductive material from the dielectric material. In another embodiment, a space is located between the “U-shaped” EM preventing liner and the diffusion barrier. In yet another embodiment, a horizontal EM liner that abuts the diffusion barrier is provided. In yet a further embodiment, a space exists between the horizontal EM liner and the diffusion barrier.

FIELD OF THE INVENTION

The present invention relates to a semiconductor interconnect structure,and a method of fabricating the same. More particularly, the presentinvention relates to a semiconductor interconnect structure havingenhanced electromigration (EM) reliability in which an EM preventingliner is present within a conductive feature of a dielectric material.

BACKGROUND OF THE INVENTION

Generally, semiconductor devices include a plurality of circuits whichform an integrated circuit (IC) fabricated on a semiconductor substrate.A complex network of signal paths will normally be routed to connect thecircuit elements distributed on the surface of the substrate. Efficientrouting of these signals across the device requires formation ofmultilevel or multilayered schemes, such as, for example, single or dualdamascene wiring structures. The wiring structure typically includescopper, Cu, since Cu based interconnects provide higher speed signaltransmission between large numbers of transistors on a complexsemiconductor chip as compared with aluminum, Al, based interconnects.

Within a typical interconnect structure, metal vias run perpendicular tothe semiconductor substrate and metal lines run parallel to thesemiconductor substrate. Further enhancement of the signal speed andreduction of signals in adjacent metal lines (known as “crosstalk”) areachieved in today's IC product chips by embedding the metal lines andmetal vias (e.g., conductive features) in a dielectric material having adielectric constant of less than 4.0.

In semiconductor interconnect structures, electromigration (EM) has beenidentified as one metal failure mechanism. EM is one of the worstreliability concerns for very large scale integrated (VLSI) circuits.The problem not only needs to be overcome during the process developmentperiod in order to qualify the process, but it also persists through thelifetime of the chip. Voids are created inside the metal conductor of aninterconnect structure due to metal ion movement caused by the highdensity of current flow.

Although the fast diffusion path in metal interconnects varies dependingon the overall integration scheme and materials used for chipfabrication, it has been observed that metal atoms, such as Cu atoms,transported along the metal/post planarized dielectric cap interfaceplay an important role on the EM lifetime projection. The EM initialvoids first nucleate at the metal/dielectric cap interface and then growin the direction of the bottom of the interconnect, which eventuallyresults in a circuit dead opening.

FIGS. 1A-1D are pictorial representations of a prior art interconnectstructure at various stages of an EM failure. In these drawings,reference numeral 12 denotes the dielectric cap, and reference numeral10 denotes the metal interconnect feature; all other components of theprior art interconnect structure are not labeled to avoid obscuring theEM problem. FIG. 1A is at an initial stress stage. FIG. 1B is at a timewhen void 14 nucleation initiates at the metal interconnect feature10/dielectric cap 12 interface. FIG. 1A is at a time when the void 14grows toward the bottom of the conductive feature 10, and FIG. 1D is ata time in which the void 14 growth crosses the metal interconnectfeature 10 causing a circuit dead opening.

FIGS. 2A-2B are SEM images from a stressed interconnect structure andthey illustrate a void forming in the metal line (M2), which implies themass transport in the metal line occurred along the interface of themetal line and the overlying dielectric cap.

In view of the above, there is a need for providing an interconnectstructure which avoids a circuit dead opening caused by EM failure.

SUMMARY OF THE INVENTION

In one aspect, the present invention relates to an interconnectstructure having improved EM reliability. The inventive interconnectstructure avoids a circuit dead opening that is caused by EM failure byincorporating an EM preventing liner within a metal interconnect. Otherbenefits of the inventive structure include: prevention of sudden dataloss and enhancement of the lifetime of the semiconductor product.

In general terms, the semiconductor interconnect structure of thepresent invention comprises:

a dielectric material having at least one conductively filled featurelocated therein, wherein said at least one conductively filled featureincludes an electromigration (EM) preventing liner that at leastpartially separates a first conductive region of said at least oneconductively filled feature from a second conductive region of said atleast one conductively filled feature.

In one embodiment, a “U-shaped” EM preventing liner is provided thatabuts a diffusion barrier that separates the at least one conductivelyfilled feature from the dielectric material. In another embodiment, aspace is located between the “U-shaped” EM preventing liner and thediffusion barrier. In yet another embodiment, a horizontal EM liner thatabuts the diffusion barrier is provided. In yet a further embodiment, aspace exists between the horizontal EM liner and the diffusion barrier.

Another aspect of the present invention relates to a method offabricating the inventive interconnect structure. The inventive methodincludes the steps of:

providing at least one opening in a dielectric material, said at leastone opening is lined with a diffusion barrier;

forming a first conductive region within said at least one opening;

forming an electromigration (EM) preventing liner on at least a surfaceof said first conductive region; and

forming a second conductive region on said EM preventing liner, saidfirst and second conductive regions form a conductive feature withinsaid dielectric material.

In one embodiment, a “U-shaped” EM preventing liner is provided thatabuts the diffusion barrier that separates the conductive feature fromthe dielectric material. In another embodiment, a space is locatedbetween the “U-shaped” EM preventing liner and the diffusion barrier. Inyet another embodiment, a horizontal EM liner that abuts the diffusionbarrier is provided. In yet a further embodiment, a space exists betweenthe horizontal EM liner and the diffusion barrier.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1D are pictorial representations (through cross sectionalviews) illustrating the formation of a circuit dead opening in a priorart interconnect structure which is caused by EM failure.

FIGS. 2A-2B are SEM images illustrating the formation of a circuit deadopening in a prior art interconnect structure caused by EM failure.

FIGS. 3A-3D are pictorial representations (through cross sectionalviews) of various interconnect structure of the present invention inwhich a circuit dead opening is avoided by forming an EM preventingliner within the metal feature.

FIGS. 4A-4F are pictorial representations (through cross sectionalviews) illustrating the basic processing steps that are employed informing the structure shown in FIG. 3A.

FIG. 5 is a pictorial representation (through a cross sectional view) ofan intermediate structure that is used in forming the structure shown inFIG. 3C.

FIG. 6 is pictorial representation (through a cross sectional view)depicting a non-ideal bottom-up deposition process used in partiallyfilling at least one opening of a dielectric material.

DETAILED DESCRIPTION OF THE INVENTION

The present invention, which provides an interconnect structure havingenhanced electromigration (EM) reliability and a method of forming thesame, will now be described in greater detail by referring to thefollowing discussion and drawings that accompany the presentapplication. It is noted that the drawings of the present applicationare provided for illustrative purposes only and, as such, the drawingsare not drawn to scale.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide a thoroughunderstanding of the present invention. However, it will be appreciatedby one of ordinary skill in the art that the invention may be practicedwithout these specific details. In other instances, well-known structureor processing steps have not been described in detail in order to avoidobscuring the invention.

It will be understood that when an element as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

As stated above, the present invention provides an interconnectstructure having improved EM reliability. The inventive interconnectstructure avoids a circuit dead opening that is caused by EM failure byincorporating an EM preventing liner within a metal interconnect.

FIGS. 3A-3D illustrate various embodiments of the present invention.Specifically, FIG. 3A-3D illustrate interconnect structures of thepresent invention in which the EM preventing liner 66 is located withinan opening of a dielectric material 54B which is filled with conductivematerial 64 and 68. In accordance with the present invention, theconductive material 64 forms a first conductive region, while conductivematerial 68 forms a second conductive region within second dielectricmaterial 54B. The first and second conductive regions in turn form aconductive feature within the second dielectric material 54B.

FIG. 3A illustrates a first embodiment of the present invention in whicha “U-shaped” EM preventing liner 66 abuts the diffusion barrier 58′ thatseparates conductive materials 64 and 68 from the dielectric material54B. FIG. 3B illustrates a second embodiment in which a space is locatedbetween the “U-shaped” EM preventing liner 66 and the diffusion barrier58′. FIG. 3C illustrates a third embodiment in which a horizontal EMliner 66 abuts the diffusion barrier, while FIG. 3D illustrates a fourthembodiment of the present invention in which a space exists between thehorizontal EM liner 66 and the diffusion barrier 58′.

Reference is now made to FIGS. 4A-4F which illustrate the basicprocessing steps that are used in forming the semiconductor structureshown in FIG. 3A. In this embodiment, the “U-shaped” EM preventing liner66 abuts the diffusion barrier 58′ that lines the at least one openingof a second dielectric material 54B. Specifically, the inventive methodbegins with providing the patterned interconnect structure 50 shown inFIG. 4A. The patterned interconnect structure 50 shown in FIG. 4Acomprises a first interconnect level 52A and a second interconnect level52B that are separated in part by a dielectric capping layer 60.

The first interconnect level 52A, which may be located above asemiconductor substrate including one or more semiconductor devices,comprises a first dielectric material 54A having at least one conductivefeature 56 that is separated from the first dielectric material 54A by adiffusion barrier 58. The second interconnect level 52B comprises asecond dielectric material 54B′ having at least one opening locatedtherein.

In FIG. 4A, there are shown a line opening 62A for a single damascenestructure, and a via opening 63A and a line opening 63B for a dualdamascene structure in the second dielectric material 54B. Althoughthese various openings are shown, the present invention works in casesin which only a single damascene line opening is formed or damasceneline and via openings are formed. When dual damascene line and viaopenings are formed, part of the dielectric capping layer 60 locatedabove the at least one conductive feature 56 is removed.

The patterned interconnect structure 50 also includes a diffusionbarrier 58′ within the at least one opening that is formed in the seconddielectric material 54B.

The patterned interconnect structure 50 shown in FIG. 4A is fabricatedutilizing standard back-end-of-the-line (BEOL) processes that are wellknown in the art including a single damascene or dual damascene process.A first via then line opening process may be used, or a first line thenvia opening process may be used.

The process typically includes deposition, lithography, etching andfilling of an opening with a diffusion barrier and then a conductivematerial, and thereafter planarization. Inasmuch as the processingdetails for fabricating such an interconnect structure are well known tothose skilled in the art, the details are omitted herein to avoidobscuring of the current invention.

It is noted that the first interconnect level 52A of the patternedinterconnect structure 50 may be formed atop a substrate (not shown inthe drawings of the present application). The substrate, which is notshown, may comprise a semiconducting material, an insulating material, aconductive material or any combination thereof. When the substrate iscomprised of a semiconducting material, any semiconductor such as Si,SiGe, SiGeC, SiC, Ge alloys, GaAs, InAs, InP and other III/V or II/VIcompound semiconductors may be used. In addition to these listed typesof semiconducting materials, the present invention also contemplatescases in which the semiconductor substrate is a layered semiconductorsuch as, for example, Si/SiGe, Si/SiC, silicon-on-insulators (SOIs) orsilicon germanium-on-insulators (SGOIs).

When the substrate is an insulating material, the insulating materialcan be an organic insulator, an inorganic insulator or a combinationthereof including multilayers. When the substrate is a conductingmaterial, the substrate may include, for example, polySi, an elementalmetal, alloys of elemental metals, a metal silicide, a metal nitride orcombinations thereof including multilayers. When the substrate comprisesa semiconducting material, one or more semiconductor devices such as,for example, complementary metal oxide semiconductor (CMOS) devices canbe fabricated thereon. When the substrate comprises a combination of aninsulating material and a conductive material, the substrate mayrepresent a first interconnect level of a multilayered interconnectstructure.

The first dielectric material 54A and the second dielectric material54B, which may be the same or different material, comprise anyinterlevel or intralevel dielectric including inorganic dielectrics ororganic dielectrics. The first and second dielectric materials 54A and54B respectively, may be porous or non-porous. Some examples of suitabledielectrics that can be used as the first and second dielectricmaterials 54A and 54B include, but are not limited to: SiO₂,silsesquioxanes, C doped oxides (i.e., organosilicates) that includeatoms of Si, C, O and H, thermosetting polyarylene ethers, ormultilayers thereof. The term “polyarylene” is used in this applicationto denote aryl moieties or inertly substituted aryl moieties which arelinked together by bonds, fused rings, or inert linking groups such as,for example, oxygen, sulfur, sulfone, sulfoxide, carbonyl and the like.

The first and second dielectric materials 54A and 54B, respectively,typically have a dielectric constant that is about 4.0 or less, with adielectric constant of about 2.8 or less being even more typical. Alldielectric constants mentioned herein are relative to a vacuum, unlessotherwise noted. These dielectrics generally have a lower parasiticcross talk as compared with dielectric materials that have a higherdielectric constant than 4.0. The thickness of the dielectric materialsmay vary depending upon the dielectric material used as well as theexact number of dielectrics layers within the first and seconddielectric materials. Typically, and for normal interconnect structures,the first dielectric material 54A and second dielectric material 54Beach have a thickness from about 50 to about 1000 nm.

The diffusion barriers 58 and 58′, which may be the same or differentmaterials, comprise Ta, TaN, Ti, TiN, Ru, RuN, RuTa, RuTaN, W, WN or anyother material that can serve as a barrier to prevent conductivematerial from diffusing there through. The thickness of the diffusionbarriers 58 and 58′ may vary depending on the deposition process used aswell as the material employed. Typically, the diffusion barriers 58 and58′ each have a thickness from about 4 to about 40 nm, with a thicknessfrom about 7 to about 20 nm being more typical.

The conductive material used in forming the conductive feature 56includes, for example, polySi, a conductive metal, an alloy comprisingat least one conductive metal, a conductive metal silicide orcombinations thereof. Preferably, the conductive material that is usedin forming the at least one conductive feature 56 is a conductive metalsuch as Cu, W or Al, with Cu or a Cu alloy (such as AlCu) being highlypreferred in the present invention.

The dielectric capping layer 60 which separates, at least in part, thesecond interconnect level 52B from the first interconnect level 52Acomprises any suitable dielectric capping material such as, for example,SiC, Si₄NH₃, SiO₂, a carbon doped oxide, a nitrogen and hydrogen dopedsilicon carbide (SiC(N,H) or multilayers thereof. The thickness of thedielectric capping layer 60 may vary depending on the technique used toform the same as well as the material make-up of the layer. Typically,the dielectric capping layer 60 has a thickness from about 15 to about100 nm, with a thickness from about 25 to about 45 nm being moretypical.

After providing the patterned interconnect structure 50 shown in FIG.4A, a conductive material 64 (forming a first conductive region of theupper interconnect level 52B) is partially formed within the at leastone opening (via and/or line openings) in the second dielectric material54B. The conductive material 64 may comprise the same or differentconductive material as defined above for the at least one conductivefeature 56. Preferably, the conductive material 64 is Cu, W or Al, withCu or a Cu alloy (such as AlCu) being more preferred in the presentinvention. The conductive material 64 may be formed by partially fillingthe at least one opening in the second dielectric material 54B or byfully filling the at least one opening and then recessing the conductivematerial to a level below the upper surface of the second dielectricmaterial 54B. Any conventional deposition process including chemicalvapor deposition (CVD), plasma enhanced chemical vapor deposition(PECVD), sputtering, chemical solution deposition or plating that fillsthe at least one opening from the bottom upwards can be used.Preferably, a bottom-up plating process is employed.

When a recess step is employed, an etching process that selectivelyremoves portions of the conductive material 64 is used to providepartial filling of the at least one opening in the second dielectricmaterial 54B. It is noted that in FIG. 4B, an ideal bottom-up fill isshown. By “ideal”, it is meant that the fill occurs mainly from thelower portion of the opening upwards.

Reference is now made to FIG. 4C which illustrates the structure afteran EM preventing liner 66 is formed on all the exposed surfaces(including horizontal and vertical) of the structure shown in FIG. 4B.The EM preventing liner 66 comprises Ta, TaN, Ti, TiN, Ru, RuN, RuTa,RuTaN, Ir, IrCu, Co(W,B,P,Mo,Re) or any like material that can preventEM failure. In the embodiment shown in FIG. 4C, the EM preventing liner66 is formed utilizing a non-directional deposition process such as, forexample, CVD and sputtering. The EM preventing liner 66 typically has athickness from about 1 to about 20 nm, with a thickness from about 2 toabout 8 nm being more typical.

In another embodiment of the present invention, the EM preventing liner66 can be formed utilizing a directional deposition process thatselectively deposits the EM preventing liner only one horizontalsurfaces of the structure. This embodiment of the present invention isshown, for example, in FIG. 5. It is noted that this embodiment of thepresent invention, also includes a catalytic plating process in whichthe EM preventing liner 66 is only formed on the exposed horizontalsurfaces of the conductive material 64. In such an embodiment (notshown), no EM preventing liner is formed on the second dielectricmaterial 64B. The directional deposition of the EM preventing liner 66is used in forming the interconnect structures shown, for example, inFIGS. 3C and 3D, i.e., horizontal EM preventing liners within theconductively filled openings of the second dielectric material 54B.

For the sake of clarity, the remaining processing steps utilize thestructure shown in FIG. 4C. Although such an illustration is provided,the following processing steps apply to the other embodiments of thepresent invention.

Next, and as shown in FIG. 4D, additional conductive material 68 whichmay comprise the same or different, preferably the same, conductor asconductive material 64 is formed. Any conventional deposition processcan be used in forming the structure shown in FIG. 4D. It is noted thatthe conductive material 68 forms a second conductive region of the upperinterconnect level 52B.

FIG. 4E illustrates the structure after planarizing the additionalconductive material 68 such that an upper surface thereof issubstantially co-planar to an upper surface of the second dielectricmaterial 54B. It is noted that during this planarization step any EMpreventing liner located atop the second dielectric material 54B isremoved. Planarization may be achieved by chemical mechanical polishingand/or grinding.

After planarization, a second dielectric capping layer 60′ is formed onthe structure shown in FIG. 4E so as to provide the structure shown inFIG. 3A. The second dielectric capping layer 60′ may be comprised of thesame or different material as the first dielectric capping layer 60.

In another embodiment of the present invention, non-ideal deposition ofthe conductive material 64 occurs when partially filling the at leastone opening in the second dielectric material 54B. This embodiment ofbegins by first providing the patterned interconnect structure 50illustrated in FIG. 4A. Next, non-ideal deposition of the conductivematerial 64 occurs providing the structure shown, for example, in FIG.6. When non-ideal deposition occurs, portions of the at least oneopening that are in proximity to the patterned vertical walls of thesecond dielectric material 54B also include the conductive material 64.Hence, this embodiment is not an ideal bottom-up deposition. Thisnon-ideal deposition occurs in most cases.

Following the formation of the structure shown in FIG. 6, the processingsteps described above can be used in forming the structures shown inFIGS. 3C and 3D.

As mentioned above, the present invention provides an interconnectstructure having improved EM reliability by incorporating an EMpreventing liner within a metal interconnect. Other benefits of theinventive structure include: prevention of sudden data loss andenhancement of the lifetime of the semiconductor product.

In addition to the above, another advantage of the inventiveinterconnect structure is that a weak interface between the conductivefeature in the second dielectric material 54B and the overlyingdielectric capping layer 60′ is avoided. Also, the inventive structureis capable of modulating stress than prior art interconnect structures.

While the present invention has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present invention. It is therefore intended that the presentinvention not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

1. An interconnect structure comprising: a dielectric material having atleast one conductively filled feature located therein, wherein said atleast one conductively filled feature includes an electromigration (EM)preventing liner that at least partially separates a first conductiveregion of said at least one conductively filled feature from a secondconductive region of said at least one conductively filled feature. 2.The interconnect structure of claim 1 further comprising a diffusionbarrier separating said at least one conductively filled feature fromsaid dielectric material.
 3. The interconnect structure of claim 2wherein said EM preventing liner is U-shaped and said EM preventingliner abuts said diffusion barrier.
 4. The interconnect structure ofclaim 2 wherein said EM preventing liner is U-shaped and a space existsbetween said EM preventing liner and said diffusion barrier.
 5. Theinterconnect structure of claim 2 wherein said EM preventing liner is ahorizontal EM liner that abuts the diffusion barrier.
 6. Theinterconnect structure of claim 2 wherein said EM preventing liner is ahorizontal EM liner and a space exists between the horizontal EM linerand the diffusion barrier.
 7. The interconnect structure of claim 1wherein said dielectric material has a dielectric constant of about 4.0or less.
 8. The interconnect structure of claim 7 wherein saiddielectric material is comprised of SiO₂, silsesquioxanes, C dopedoxides that include atoms of Si, C, O and H, thermosetting polyaryleneethers, or multilayers thereof.
 9. The interconnect structure of claim 1wherein said EM preventing liner is comprised of Ta, TaN, Ti, TiN, Ru,RuN, RuTaN, RuTaN, Ir, IrCu or Co(W,B,P,Mo,Re).
 10. The interconnectstructure of claim 1 wherein said at least one opening is a lineopening.
 11. The interconnect structure of claim 1 wherein said at leastone opening is a combined line and via opening.
 12. The interconnectstructure of claim 1 wherein said dielectric material is an upperinterconnect level that is located atop a lower interconnect level, saidlower interconnect level comprising another dielectric material havinganother conductive features embedded therein.
 13. The interconnectstructure of claim 12 wherein said upper and lower interconnect levelsare separated in part by a dielectric capping layer.
 14. An interconnectstructure comprising: a dielectric material having at least oneconductively filled feature located therein, said at least oneconductively filled feature is separated from said dielectric materialby a diffusion barrier, wherein said at least one conductively filledfeature includes a horizontal electromigration (EM) preventing linerthat separates a lower conductive material from an upper conductivematerial and abuts said diffusion barrier.
 15. The interconnectstructure of claim 14 wherein said dielectric material has a dielectricconstant of about 4.0 or less.
 16. The interconnect structure of claim15 wherein said dielectric material is comprised of SiO₂,silsesquioxanes, C doped oxides that include atoms of Si, C, O and H,thermosetting polyarylene ethers, or multilayers thereof.
 17. Theinterconnect structure of claim 14 wherein said horizontal EM preventingliner is comprised of Ta, TaN, Ti, TiN, Ru, RuN, RuTaN, RuTaN, Ir, IrCuor Co(W,B,P,Mo,Re).
 18. The interconnect structure of claim 14 whereinsaid at least one opening is a line opening.
 19. The interconnectstructure of claim 14 wherein said at least one opening is a combinedline and via opening.
 20. The interconnect structure of claim 14 whereinsaid dielectric material is an upper interconnect level that is locatedatop a lower interconnect level, said lower interconnect levelcomprising another dielectric material having another conductive featureembedded therein.
 21. The interconnect structure of claim 20 whereinsaid upper and lower interconnect levels are separated in part by adielectric capping layer.
 22. A method of fabricating an interconnectstructure comprising: providing at least one opening in a dielectricmaterial, said at least one opening is lined with a diffusion barrier;forming a first conductive region within said at least one opening;forming an electromigration (EM) preventing liner on at least a surfaceof said first conductive region; and forming a second conductive regionon said EM preventing liner, said first and second conductive regionsform a conductive feature within said dielectric material.
 23. Themethod of claim 22 wherein said EM preventing liner is U-shaped and saidEM preventing liner abuts said diffusion barrier.
 24. The method ofclaim 22 wherein said EM preventing liner is U-shaped and a space existsbetween said EM preventing liner and said diffusion barrier.
 25. Themethod of claim 22 wherein said EM preventing liner is a horizontal EMliner that abuts the diffusion barrier.
 26. The method of claim 22wherein said EM preventing liner is a horizontal EM liner and a spaceexists between the horizontal EM liner and the diffusion barrier. 27.The method of claim 22 wherein said forming said first conductive regioncomprises a bottom-up deposition fill process.
 28. The method of claim22 wherein said forming said EM preventing layer comprises anon-selective deposition process.
 29. The method of claim 22 whereinsaid forming said EM preventing layer comprises a directional orselective deposition process.
 30. The method of claim 22 furthercomprising forming a dielectric capping layer on said dielectricmaterial.